| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO5 |
| Manufacturer |
Raytheon Semiconductor |
| Vbr CEO |
35 |
| C(ob) (F) |
60p |
| hfe |
18 |
| Ic Max. (A) |
50m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
.35M- |
| Oper. Temp (°C) Max. |
160 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.33 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
35 V |
| Maximum Emitter-Base Voltage |Veb| |
20 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
160 °C |
| Collector Capacitance (Cc) |
120 pF |
| Transition Frequency (ft): |
0.12 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
116230 |