The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N330

2N330

SKU: 2N330
2N330 Transistor Silicon PNP CASE: TO5 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Raytheon Semiconductor
Vbr CEO 45
Max. PD (W) 337m
C(ob) (F) 60p
Derate (Amb) (W/°C) 2.5m
hfe 9.0
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 500k-
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 160
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 160 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 116232
Back