The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3342
View detailed images (12)

2N3342

SKU: 2N3342
2N3342 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 20
Vbr CEO 8.0
Max. PD (W) 250m
C(ob) (F) 10p
Derate (Amb) (W/°C) 1.6m
hfe 30
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 5.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 8 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 774916
Back