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2N339
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2N339

SKU: 2N339
2N339 Transistor Silicon NPN CASE: TO18 MAKE: Generic
Datasheet
2N339 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer New Jersey Semiconductor
Vbr CBO 55
Vbr CEO 55
Max. PD (W) 1.0
Min hFE 20-
Ic Max. (A) 60m
@Ic (test) (A) 40m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.06 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Forward Current Transfer Ratio (hFE), MIN 50
SKU 606040
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