2N339A
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2N339A

SKU: 2N339A
2N339A Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 250m
C(ob) (F) 50p
Derate (Amb) (W/°C) 3.0m
hfe 10
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
@VCE (test) (V) 20
Oper. Temp (°C) Max. 200
@Ic (A) 5.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 55
SKU 368304
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