The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3413
View detailed images (12)

2N3413

SKU: 2N3413
2N3413 Transistor Silicon PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Generic
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 400m
C(ob) (F) 150p
Derate (Amb) (W/°C) 2.9m
hfe 8.0
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 0.25 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 774857
Back