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2N3419S
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2N3419S

SKU: 2N3419S
2N3419S Transistor Silicon NPN CASE: TO39 MAKE: Generic
Datasheet
2N3419S Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Microsemi
Vbr CBO 125
Vbr CEO 80
Max. PD (W) 1.0
Max. hFE 60
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Polarity NPN
Derate Above 25°C 5.7m
Oper. Temp (°C) Max. 200
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 125 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 160 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 774847
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