The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3467L
View detailed images (12)

2N3467L

SKU: 2N3467L
2N3467L Transistor Silicon PNP CASE: TO5 MAKE: Generic
Datasheet
2N3467L Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Microsemi
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 1.0
Derate (Amb) (W/°C) 5.7m
t(f) Max. (S) 30n
Max. hFE 120
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 30n
Trans. Freq (Hz) Min. 175M
Oper. Temp (°C) Max. 200
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 774773
Back