2N3495S

2N3495S

SKU: 2N3495S
2N3495S Transistor Silicon PNP CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 600m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 3.4m
hfe 40
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 553957
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