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2N3501L
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2N3501L

SKU: 2N3501L
2N3501L Transistor Silicon NPN CASE: TO5 MAKE: Microsemi Corporation
Datasheet
2N3501L Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Microsemi Corporation
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 1.0
Max. hFE 300
Min hFE 100
Ic Max. (A) 300m
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Derate Above 25°C 5.7m
Oper. Temp (°C) Max. 200
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 774695
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