2N3506L

SKU: 2N3506L

2N3506L Transistor Silicon NPN CASE: TO5 MAKE: Generic

Datasheet

2N3506L Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	Microsemi
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	1.0
Max. hFE	200
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	1.5
Polarity	NPN
Derate Above 25°C	5.7m
Oper. Temp (°C) Max.	200
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	40 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	774669

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