The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3527
View detailed images (12)

2N3527

SKU: 2N3527
2N3527 Transistor Silicon PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Generic
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 400m
C(ob) (F) 10p
Derate (Amb) (W/°C) 2.3m
hfe 40
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) .1n
Polarity PNP
Trans. Freq (Hz) Min. 5.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) .1u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 774627
Back