2N3549

SKU: 2N3549

2N3549 Transistor Silicon PNP CASE: TO18 MAKE: Generic

Datasheet

2N3549 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	Central Semiconductor
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	400m
C(ob) (F)	8.0p
Derate (Amb) (W/°C)	2.2m
hfe	100
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	10n
Polarity	PNP
Trans. Freq (Hz) Min.	60M
@VCE (test) (V)	5.0i
Oper. Temp (°C) Max.	175
@Ic (A)	10u
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	774611

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