2N357
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2N357

SKU: 2N357
2N357 Transistor Germanium NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer USA Make
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 100m
C(ob) (F) 14p-
Derate (Amb) (W/°C) 2.0m
hfe 45-
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Trans. Freq (Hz) Min. 6.0M-
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 85
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 774599
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