The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3581
View detailed images (13)

2N3581

SKU: 2N3581
2N3581 Transistor Silicon PNP CASE: TO46 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO46
Manufacturer Generic
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 400m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 2.2m
hfe 150
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 100u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 606049
Back