2N3593

SKU: 2N3593

2N3593 Transistor Silicon NPN CASE: TO31 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO31
Manufacturer	USA Make
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	1.0
Max. hFE	90
Min hFE	30
Ic Max. (A)	500m
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Derate Above 25°C	40m
Trans. Freq (Hz) Min.	15M
Oper. Temp (°C) Max.	175#
@VCE (V)	8.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	774584

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