The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3599

2N3599

SKU: 2N3599
2N3599 Transistor Silicon NPN CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 100
t(f) Max. (S) 2.7u+
Max. hFE 225
Min hFE 75
Ic Max. (A) 20
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 700n
R(sat) (Û) 80m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175#
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 700 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 774579
Back