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2N3636L
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2N3636L

SKU: 2N3636L
2N3636L Transistor Silicon PNP CASE: TO5 MAKE: Generic
Datasheet
2N3636L Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Microsemi
Vbr CBO 175
Vbr CEO 175
Max. PD (W) 1.0
Derate (Amb) (W/°C) 5.7m
t(f) Max. (S) 150n+
Max. hFE 150
Min hFE 50
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Polarity PNP
Tr Max. (s) 100n
Oper. Temp (°C) Max. 200
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 175 V
Maximum Collector-Emitter Voltage |Vce| 175 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 10 pF
Forward Current Transfer Ratio (hFE), MIN 50
SKU 774541
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