2N3637S

SKU: 2N3637S

2N3637S Transistor Silicon PNP CASE: TO5 MAKE: Microsemi Corporation

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	Microsemi Corporation
Vbr CBO	175
Vbr CEO	175
Max. PD (W)	1.0
Derate (Amb) (W/°C)	28m
t(f) Max. (S)	600n+
Max. hFE	300
Min hFE	100
Ic Max. (A)	1.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Tr Max. (s)	400n
R(sat) (Û)	40
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	175 V
Maximum Collector-Emitter Voltage \|Vce\|	175 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	774529

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