2N3661

SKU: 2N3661

2N3661 Transistor Silicon PNP CASE: TO5 MAKE: USA Make

Datasheet

2N3661 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	5.0
Derate (Amb) (W/°C)	66m
Max. hFE	100
Min hFE	25
Ic Max. (A)	1.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
R(sat) (Û)	2.4
Trans. Freq (Hz) Min.	25M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	5 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	275 pF
Transition Frequency (ft):	25 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	606053

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