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2N3673
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2N3673

SKU: 2N3673
2N3673 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Central Semiconductor
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 350m
C(ob) (F) 9p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 2.0m
t(f) Max. (S) 30n
hfe 55
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 40n
t(stor) Max. (S) 80n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) .10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 774507
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