2N3712S

SKU: 2N3712S

2N3712S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Motorola Semiconductor
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	800m
C(ob) (F)	9.0p
Derate (Amb) (W/°C)	5.3m
hfe	25
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	40M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	175
@Ic (A)	30m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	9 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	553960

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