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2N3719
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2N3719

SKU: 2N3719
2N3719 Transistor Silicon PNP CASE: TO5 MAKE: Generic
Datasheet
2N3719 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Microsemi
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 6.0
Derate (Amb) (W/°C) 34m
t(f) Max. (S) 400n+
Max. hFE 180
Min hFE 25
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 100n
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 175
@VCE (V) 1.5
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 82798
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