| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO39 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
50 |
| Vbr CEO |
30 |
| Max. PD (W) |
1.0 |
| t(f) Max. (S) |
25n |
| Max. hFE |
120 |
| Min hFE |
30 |
| Ic Max. (A) |
1.5 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
200nϸ |
| Polarity |
NPN |
| Tr Max. (s) |
40n |
| R(sat) (Û) |
20 |
| Derate Above 25°C |
22m |
| Trans. Freq (Hz) Min. |
300M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
1.5 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
1 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
1.5 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
9 pF |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
553961 |