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2N376
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2N376

SKU: 2N376
2N376 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 10
Max. hFE 120
Min hFE 35
Ic Max. (A) 3.0
@Ic (test) (A) 700m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
Derate Above 25°C 1.0
Oper. Temp (°C) Max. 90
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 774408
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