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2N3762S
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2N3762S

SKU: 2N3762S
2N3762S Transistor Silicon PNP CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 1.0
Derate (Amb) (W/°C) 22m
t(f) Max. (S) 35n
Max. hFE 120
Min hFE 30
Ic Max. (A) 1.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 35n
R(sat) (Û) 10
Trans. Freq (Hz) Min. 180M
Oper. Temp (°C) Max. 175
@VCE (V) 1.5
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 553965
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