2N3765

2N3765

SKU: 2N3765
2N3765 Transistor Silicon PNP CASE: TO46 MAKE: Generic
Datasheet
2N3765 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO46
Manufacturer Microsemi
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 500m
C(ob) (F) 15p
Derate (Amb) (W/°C) 2.9m
hfe 35
Ic Max. (A) 1.5
Icbo Max. @Vcb Max. (A) .1uϸ
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 774390
Back