Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon NPN |
Manufacturer |
Microsemi Corporation |
Vbr CBO |
400 |
Vbr CEO |
325 |
Max. PD (W) |
100 |
Max. hFE |
180 |
Min hFE |
20 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
500m |
Icbo Max. @Vcb Max. (A) |
5.0mϸ |
Polarity |
NPN |
R(sat) (Û) |
2.0 |
Derate Above 25°C |
666m |
Trans. Freq (Hz) Min. |
50k |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
100 W |
Maximum Collector-Base Voltage |Vcb| |
400 V |
Maximum Collector-Emitter Voltage |Vce| |
325 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
400 pF |
Transition Frequency (ft): |
5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
83866 |