The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3809
View detailed images (1)

2N3809

SKU: 2N3809
2N3809 Transistor Silicon PNP CASE: TO71-1 MAKE: Generic
Datasheet
2N3809 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO71-1
Manufacturer Central Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 500m
C(ob) (F) 4p
Derate (Amb) (W/°C) 2.9m
hfe 300
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) .01u
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 7-16
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 606063
Back