2N3868S

SKU: 2N3868S

2N3868S Transistor Silicon PNP CASE: TO39 MAKE: Generic

Datasheet

2N3868S Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	Microsemi
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	1.0
Derate (Amb) (W/°C)	5.7m
t(f) Max. (S)	100n
Max. hFE	150
Min hFE	30
Ic Max. (A)	3.0
@Ic (test) (A)	1.5
Polarity	PNP
Tr Max. (s)	65n
R(sat) (Û)	1.0
Oper. Temp (°C) Max.	200
@VCE (V)	2.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	120 pF
Forward Current Transfer Ratio (hFE), MIN	30
SKU	774227

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