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2N3996
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2N3996

SKU: 2N3996
2N3996 Transistor Silicon NPN CASE: TO62 MAKE: Generic
Datasheet
2N3996 Datasheet
Product specifications
Equivalent 2N3996-SMD
Type Transistor Silicon NPN
Case TO62
Manufacturer Microsemi
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 2.0
t(f) Max. (S) 1.5u+
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Tr Max. (s) 300n
Derate Above 25°C 300m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 4-25
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 368413
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