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2N3999
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2N3999

SKU: 2N3999
2N3999 Transistor Silicon NPN CASE: MT38-1 MAKE: Generic
Datasheet
2N3999 Datasheet
Product specifications
Type Transistor Silicon NPN
Case MT38-1
Manufacturer Microsemi
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 2.0
t(f) Max. (S) 2.0u+
Min hFE 60
Ic Max. (A) 5.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Tr Max. (s) 300n
Derate Above 25°C 300m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 368414
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