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2N4111
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2N4111

SKU: 2N4111
2N4111 Transistor Silicon NPN CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 30
Max. hFE 120
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Derate Above 25°C 333m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 165 °C
Collector Capacitance (Cc) 120 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 773962
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