2N4116

SKU: 2N4116

2N4116 Transistor Silicon NPN CASE: TO59 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO59
Manufacturer	USA Make
Vbr CBO	120
Vbr CEO	80
Max. PD (W)	37
Max. hFE	300
Min hFE	100
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
R(sat) (Û)	300m
Derate Above 25°C	361m
Trans. Freq (Hz) Min.	70M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	37 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	165 °C
Collector Capacitance (Cc)	120 pF
Transition Frequency (ft):	70 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	773961

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