The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N4150S
View detailed images (13)

2N4150S

SKU: 2N4150S
2N4150S Transistor Silicon NPN CASE: TO39 MAKE: Generic
Datasheet
2N4150S Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Microsemi
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 5.0
t(f) Max. (S) 200n
Max. hFE 120
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 200n
Derate Above 25°C 50m
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 350 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 773902
Back