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2N416
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2N416

SKU: 2N416
2N416 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 30
Vbr CEO 12
Max. PD (W) 150m
C(ob) (F) 12p-
Derate (Amb) (W/°C) 2.5m
hfe 80-
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 10M-
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 85
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 773885
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