The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N4207
View detailed images (4)

2N4207

SKU: 2N4207
2N4207 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Datasheet
2N4207 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Central Semiconductor
Vbr CBO 6.0
Vbr CEO 6.0
Max. PD (W) 300m
C(ob) (F) 3p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 1.7m
t(f) Max. (S) 10n
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) .01u
Polarity PNP
Tr Max. (s) 15n
t(stor) Max. (S) 15n
Trans. Freq (Hz) Min. 650M
@VCE (test) (V) .30
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 6 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 650 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 773850
Back