2N4232A

SKU: 2N4232A

2N4232A Transistor Silicon NPN CASE: TO66 MAKE: Generic

Datasheet

2N4232A Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	MOSPEC Semiconductor
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	75
t(f) Max. (S)	200n-
Max. hFE	100
Min hFE	25
Ic Max. (A)	3.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Derate Above 25°C	430m
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	75 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	300 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	773835

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