2N4296

SKU: 2N4296

2N4296 Transistor Silicon NPN CASE: TO66 MAKE: Generic

Datasheet

2N4296 Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	New Jersey Semiconductor
Vbr CBO	350
Vbr CEO	250
Max. PD (W)	2.0
Max. hFE	150
Min hFE	50
Ic Max. (A)	1.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	7.0u
Derate Above 25°C	16m
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	350 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	773793

Back