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2N4298
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2N4298

SKU: 2N4298
2N4298 Transistor Silicon NPN CASE: TO66 MAKE: Generic
Datasheet
2N4298 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer New Jersey Semiconductor
Vbr CBO 500
Vbr CEO 350
Max. PD (W) 2.0
Max. hFE 75
Min hFE 25
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 7.0u
Derate Above 25°C 16m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 773791
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