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2N4357
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2N4357

SKU: 2N4357
2N4357 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Generic
Vbr CBO 240
Vbr CEO 240
Max. PD (W) 400m
C(ob) (F) 7p
Derate (Amb) (W/°C) 2.3m
hfe 100
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) .02u
Polarity PNP
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 240 V
Maximum Collector-Emitter Voltage |Vce| 240 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 606091
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