The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N4389
View detailed images (1)

2N4389

SKU: 2N4389
2N4389 Transistor Silicon PNP CASE: TO59 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO59
Manufacturer Generic
Vbr CBO 12
Vbr CEO 12
Max. PD (W) 200m
C(ob) (F) 6.0p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 2.0m
t(f) Max. (S) 30n
hfe 180
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 15n
t(stor) Max. (S) 75n
Trans. Freq (Hz) Min. 400M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 12 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 9 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 773731
Back