Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon PNP |
Manufacturer |
NTE Electronics |
Vbr CBO |
60 |
Vbr CEO |
60 |
Max. PD (W) |
5.0 |
Derate (Amb) (W/°C) |
29m |
t(f) Max. (S) |
600n |
Max. hFE |
60 |
Min hFE |
15 |
Ic Max. (A) |
30 |
@Ic (test) (A) |
15 |
Icbo Max. @Vcb Max. (A) |
1.0m |
Polarity |
PNP |
Tr Max. (s) |
400n |
Trans. Freq (Hz) Min. |
4.0M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
200 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
50 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
4 MHz |
Forward Current Transfer Ratio (hFE), MIN |
15 |
SKU |
83117 |