| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO39 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
80 |
| Vbr CEO |
80 |
| Max. PD (W) |
5.0 |
| Derate (Amb) (W/°C) |
28m |
| t(f) Max. (S) |
50n |
| Max. hFE |
120 |
| Min hFE |
30 |
| Ic Max. (A) |
1.5 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
25n |
| Polarity |
PNP |
| Tr Max. (s) |
60n |
| Trans. Freq (Hz) Min. |
150M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
1.2 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
2 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
15 pF |
| Transition Frequency (ft): |
150 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
| SKU |
83883 |