The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N4449

2N4449

SKU: 2N4449
2N4449 Transistor Silicon NPN CASE: TO46 MAKE: Generic
Datasheet
2N4449 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO46
Manufacturer Microsemi
Vbr CEO 15
Max. PD (W) 300m
C(ob) (F) 4p
t(on) Delay (S) 9.0n
Derate (Amb) (W/°C) 1.7m
t(f) Max. (S) 8.0n
hfe 40
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) .40u
Polarity NPN
Tr Max. (s) 60n
t(stor) Max. (S) 12n
Trans. Freq (Hz) Min. 500M
@VCE (test) (V) .35
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 773655
Back