2N457

2N457

SKU: 2N457
2N457 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Equivalent 2N457B
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 50
t(f) Max. (S) 80u-
Max. hFE 90
Min hFE 30-
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Tr Max. (s) 26u-
R(sat) (Û) 48m
Derate Above 25°C 909m
Trans. Freq (Hz) Min. 200k
Oper. Temp (°C) Max. 95
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 368478
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