2N457B
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2N457B

SKU: 2N457B
2N457B Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Equivalent 2N457
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 150
t(f) Max. (S) 80u-
Max. hFE 90
Min hFE 30
Ic Max. (A) 7.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Tr Max. (s) 26u-
R(sat) (Û) 48m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 200k
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 773632
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