| Type | Transistor Germanium PNP | |
| Case | TO5 | |
| Manufacturer | Raytheon Semiconductor | |
| Vbr CEO | 12 | |
| Max. PD (W) | 150m | |
| C(ob) (F) | 14p- | |
| Derate (Amb) (W/°C) | 2.5m | |
| hfe | 60- | |
| Ic Max. (A) | 20m | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 5.5M- | |
| @VCE (test) (V) | 6.0 | |
| Oper. Temp (°C) Max. | 85 | |
| @Ic (A) | 1.0m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.15 W | |
| Maximum Collector-Base Voltage |Vcb| | 12 V | |
| Maximum Collector Current |Ic max| | 0.02 A | |
| Max. Operating Junction Temperature (Tj) | 85 °C | |
| Collector Capacitance (Cc) | 24 pF | |
| Transition Frequency (ft): | 2.5 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 312997 | |