The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N4930

2N4930

SKU: 2N4930
2N4930 Transistor Silicon PNP CASE: TO5 MAKE: Motorola Semiconductor
Datasheet
2N4930 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Motorola Semiconductor
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 1.0
Derate (Amb) (W/°C) 28m
Max. hFE 200
Min hFE 20
Ic Max. (A) 50m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
R(sat) (Û) 500
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 394373
Back