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2N4956
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2N4956

SKU: 2N4956
2N4956 Transistor Silicon NPN CASE: R137 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case R137
Manufacturer Generic
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 350m
Derate (Amb) (W/°C) 3.5m
hfe 150
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 7-16
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.45 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 773510
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